This animation is provided by Maricopa Advanced Technology Education Center (MATEC) and shows the plasma etching of silicon dioxide. In this type of plasma etching process, a chlorine gas and argon gas mixture is used. The chlorine gas neutral charge molecules bond with the surface silicon dioxide molecules and create silicon chloride molecule. Through the bombardment of the plasma charged Argon molecules the silicon chloride molecules are released from the surface layer. The etch continues till the exposed silicon dioxide material is removed. This video runs 00:32 seconds in length.
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