This presentation was given at the Arizona Nanotechnology Conference in 2008 by Dr. Stefan Zollner, Freescale Semiconductor, USA. The focus is on problems with planar CMOS and their solutions. These solutions consist of: SOI or FINFET to reduce source and drain leakage, high mobility channel materials to increase drive current, new silicide materials to reduce source and drain contact resistance, metal oxides with high dielectric constants to reduce gate leakage and metal gate electrodes to reduce gate depletion. 

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