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This animation is provided by Maricopa Advanced Technology Education Center (MATEC) and illustrates the diffusion process. The objective of the animation is to explain the difference between the Vacancy and Interstitial diffusion models. These models have been developed to explain the mechanism for the diffusion of dopants into silicon. It is the different bonding characteristics of the dopants with silicon that determine the diffusion mechanism. Although each model is based on these differences, they are not mutually exclusive. An .mp4 is also available for viewing and runs 02:19 minutes in length. 

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